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STPR805DF-STPR860DF Vishay Lite-On Power Semiconductor 8.0A Super-Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super-fast switching times for high efficiency High current capability and low forward voltage drop D Surge overload rating to 125A peak D Low reverse leakage current D Plastic material - UL Recognition flammability classification 94V-0 94 9537 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type STPR805DF STPR810DF STPR815DF STPR820DF STPR830DF STPR840DF STPR850DF STPR860DF Symbol VRRM =VRWM =VR V Value 50 100 150 200 300 400 500 600 125 8 -65...+150 Unit V V V V V V V V A A C Peak forward surge current Average forward current TC=100C Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=8A Type STPR805DF-820DF STPR830DF-840DF STPR850DF-860DF Symbol VF VF VF IR IR trr trr CD CD RthJC Min Typ Max 0.95 1.3 1.5 5 500 35 50 Unit V V V Reverse current Reverse recovery time y Diode capacitance Thermal resistance junction to case TC=25C TC=100C IF=1A, IR=0.5A, Irr=0.25A VR=4V, f=1MHz mA mA ns ns pF pF K/W STPR805DF-820DF STPR830DF-860DF STPR805DF-840DF STPR850DF-860DF 85 60 6.3 Rev. A2, 24-Jun-98 1 (4) STPR805DF-STPR860DF Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFAV - Average Forward Current ( A ) 10 8 6 C D - Diode Capacitance ( pF ) 400 500V-600V 100 4 50V-400V 2 0 0 50 100 150 10 0.1 15445 15442 Tamb - Ambient Temperature ( C ) 1.0 10 VR - Reverse Voltage ( V ) 100 Figure 1. Max. Average Forward Current vs. Ambient Temperature 100 I - Forward Current ( A ) IF Pulse Width = 300 s 2% Duty Cycle Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 IR - Reverse Current ( m A ) 10 Tj = 100C 10 1.0 Tj = 75C 1.0 F 0.1 Tj = 25C 50V- 200V 300V- 400V 500V- 600V 0.1 0.2 15443 0.01 0.6 1.0 1.4 VF - Forward Voltage ( V ) 0 15447 40 80 120 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 150 125 100 75 50 25 0 Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 8.3 ms Single Half-Sine-Wave JEDEC method 1 15444 10 Number of Cycles at 60 Hz 100 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 STPR805DF-STPR860DF Vishay Lite-On Power Semiconductor Dimensions in mm 14469 Case: molded plastic Polarity: see diagram Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) STPR805DF-STPR860DF Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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